Substrate processing device

ABSTRACT

Disclosed is a heat shielding device which shields heat from a chamber wall to the outside by creating one or more gas insulating layers around a chamber heated to a high temperature, thereby reducing heat loss and power consumed when heating the chamber to a certain temperature and reducing safety problems such as burning of an operator.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of U.S. Provisional Application No. 62/874,722, filed on Jul. 16, 2019, in the United States Patent and Trademark Office, the disclosure of which is incorporated herein in its entirety by reference.

BACKGROUND 1. Field

One or more example embodiments relate to a substrate processing device, and more particularly, to a substrate processing device capable of shielding heat due to chamber heating.

2. Description of Related Art

A semiconductor device is manufactured by processing a silicon substrate through various processing devices. A process of manufacturing the semiconductor device includes a front-end process and a back-end process. The front-end process is a process of processing a silicon substrate while repeating processes such as photolithography, deposition, and etching. In particular, the deposition process of the front-end process is a process for forming a thin film by supplying reactive gases onto a substrate to cause a chemical reaction. The chemical reaction includes a process for activating a surface of the substrate or reactive gas to cause a reaction between the substrate and the reactive gas. In general, this activation process includes a thermal process using heat or a plasma process using plasma.

For the thermal process, a component mounting a substrate and a device surrounding the component are heated to a certain temperature. For example, a substrate mounting portion, such as a heating block and a susceptor, is heated to a temperature of 300 degrees or more, a chamber wall surrounding the substrate mounting portion is heated to a temperature of 150 degrees or more, and a reaction space is maintained at a certain temperature such that a thermal process is possible.

However, maintaining the substrate processing device at a high temperature causes safety problems such as burning of an operator.

FIGS. 1 and 2 schematically illustrate a substrate processing device of the prior art for solving such safety problems.

Referring to FIGS. 1 and 2, a conventional substrate processing device includes a chamber 1, a first insulating plate 2 attached to an outer wall of the chamber 1, and a second insulating plate 3 apart from the first insulating plate 2. The second insulating plate 3 is disposed apart from the first insulating plate 2 by a support 4. A gas insulating layer a is defined by the first insulating plate 2, the support 4, and the second insulating plate 3 and is formed between the outer wall of the chamber 1 and an outer space. The gas insulating layer a blocks heat of the chamber 1 from transmitting to the outer space.

As such, the substrate processing device of the prior art blocks heat from the chamber 1 by using the two insulating plates, that is, the first and second insulating plates 2 and 3. However, since the first insulating plate 2 is in close contact with a wall of the chamber 1, heat of the wall of the chamber 1 is directly transmitted to the first insulating plate 2, which limits effective shielding of the heat by the two insulating plates, that is, the first and second insulating plates 2 and 3, and the gas insulating layer a.

SUMMARY

One or more embodiments include a device for solving the above-mentioned problems. In particular, one or more embodiments include a device for effectively shielding heat generated by chamber heating.

Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the presented embodiments of the disclosure.

According to one or more embodiments, a substrate processing device includes: a chamber; a first insulating plate apart from an outer wall of the chamber by a first preset distance; and a second insulating plate apart from the first insulating plate by a second preset distance, wherein the first insulating plate may be located between the outer wall of the chamber and the second insulating plate.

According to a further example of the substrate processing device, the first preset distance may be equal to or greater than the second preset distance.

According to a further example of the substrate processing device, a first space is between the outer wall of the chamber and the first insulating plate, a second space is between the first insulating plate and the second insulating plate, and the substrate processing device may further include a refrigerant supplier for supplying refrigerant to the second space.

According to a further example of the substrate processing device, the substrate processing device may further include an additional refrigerant supplier for supplying refrigerant to the first space.

According to a further example of the substrate processing device, the substrate processing device may further include a suction unit for sucking gas in the first space and the second space.

According to a further example of the substrate processing device, the refrigerant supplier and the additional refrigerant supplier may control at least one of the temperature and the flow rate of refrigerant such that temperature of the second space is lower than temperature of the first space.

According to another example of the substrate processing device, at least one gap is in the first insulating plate, and the first space and the second space may communicate with each other through the gap.

According to a further example of the substrate processing device, the at least one gap may be located below the first insulating plate.

According to a further example of the substrate processing device, the substrate processing device may further include a suction unit for sucking gas in the first space.

According to a further example of the substrate processing device, the substrate processing device may further include: a gas supplier for supplying gas into the chamber; and an exhauster connected to the gas supplier and the suction unit.

According to a further example of the substrate processing device, the relationship of pressure of the second space>pressure of the first space>pressure of the suction unit>the pressure of the exhauster is satisfied, and the relationship of pressure of the gas supplier>pressure of the suction unit>pressure of the exhauster is satisfied.

According to one or more embodiments, a substrate processing device includes: a chamber; a first insulating plate surrounding the chamber and apart from the chamber; and a second insulating plate surrounding the first insulating plate and apart from the first insulating plate chamber.

According to a further example of the substrate processing device, a first space may be between the outer wall of the chamber and the first insulating plate, a second space may be between the first insulating plate and the second insulating plate, and the substrate processing device may further include at least one refrigerant supplier communicating with the first space or the second space.

According to a further example of the substrate processing device, the at least one refrigerant supplier may communicate with the second space, at least one gap may be in the first insulating plate, and the first space and the second space may communicate with each other through the gap.

According to a further example of the substrate processing device, the at least one gap may be located opposite the at least one refrigerant supplier with respect to the chamber.

According to a further example of the substrate processing device, the substrate processing device may further include a suction unit for sucking gas in the first space, and the suction unit may be located opposite the at least one gap with respect to the chamber.

According to a further example of the substrate processing device, temperature of refrigerant flowing into the first space may be higher than temperature of refrigerant flowing into the second space.

According to another example of the substrate processing device, at least one gap may be in the first insulating plate, and the first space and the second space may communicate with each other through the gap, and the substrate processing device may include: two or more gas suppliers symmetrically arranged in at least one of the first space and the second space; and two or more suction units symmetrically arranged in at least one of the first space and the second space.

According to one or more embodiments, a substrate processing device includes: a chamber; a plurality of first insulating plates respectively forming a plurality of first spaces together with one outer wall of the chamber; and a plurality of second insulating plates respectively forming a plurality of second spaces together with one of the plurality of first insulating plates, wherein each of the plurality of first insulating plates is between one outer wall of the chamber and one of the plurality of second insulating plates, the plurality of first spaces may be apart from each other, and the plurality of second spaces may be apart from each other.

According to a further example of the substrate processing device, each of the plurality of second spaces may communicate with at least one refrigerant supplier.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features, and advantages of certain embodiments of the disclosure will be more apparent from the following description taken in conjunction with the accompanying drawings, in which:

FIG. 1 is a view of a heat shielding device of a substrate processing device of the prior art;

FIG. 2 is a cross-sectional view of a heat shielding device of a substrate processing device of the prior art;

FIG. 3 is a cross-sectional view of a heat shielding device according to embodiments;

FIG. 4A is a cross-sectional view of a heat shielding device according to further embodiments;

FIG. 4B is a view of a refrigerant supplier according to further embodiments;

FIGS. 5 to 8 are cross-sectional views of a heat shielding device according to further embodiments;

FIG. 9 is a cross-sectional view of a substrate processing device according to embodiments;

FIGS. 10A to 10F are top views of a heat shielding device according to embodiments;

FIGS. 11A to 11C are top views of a heat shielding device according to other embodiments; and

FIG. 12 is a view of a substrate processing system according to embodiments.

DETAILED DESCRIPTION

Hereinafter, one or more example embodiments will be described more fully with reference to the accompanying drawings.

Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the present embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Accordingly, the embodiments are merely described below, by referring to the figures, to explain aspects of the present description. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items. Expressions such as “at least one of,” when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list.

The terminology used herein is for the purpose of describing particular embodiments and is not intended to limit the disclosure. As used herein, the singular forms “a”, “an”, and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “includes”, “comprises” and/or “including”, “comprising” used herein specify the presence of stated features, integers, steps, operations, members, components, and/or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, members, components, and/or groups thereof. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.

It will be understood that, although the terms first, second, etc. may be used herein to describe various members, components, regions, layers, and/or sections, these members, components, regions, layers, and/or sections should not be limited by these terms. These terms do not denote any order, quantity, or importance, but rather are only used to distinguish one component, region, layer, and/or section from another component, region, layer, and/or section. Thus, a first member, component, region, layer, or section discussed below could be termed a second member, component, region, layer, or section without departing from the teachings of embodiments.

Embodiments of the disclosure will be described hereinafter with reference to the drawings in which embodiments of the disclosure are schematically illustrated. In the drawings, variations from the illustrated shapes may be expected as a result of, for example, manufacturing techniques and/or tolerances. Thus, the embodiments of the present disclosure should not be construed as being limited to the particular shapes of regions illustrated herein but may include deviations in shapes that result, for example, from manufacturing processes.

FIG. 3 is a cross-sectional view of a heat shielding device according to embodiments;

Referring to FIG. 3, a substrate processing device includes a chamber 10, a first insulating plate 20 apart from an outer wall of the chamber 10, and a second insulating plate 30 apart from the first insulating plate 20. The first insulating plate 20 is between the outer wall of the chamber 10 and the second insulating plate 30.

The first insulating plate 20 may be apart from the outer wall of the chamber 10 by a first preset distance d1 by at least one first support 40. The second insulating plate 30 may be apart from the first insulating plate 20 by a second preset distance d2 by at least one second support 50.

There may be a first space a1 between the outer wall of the chamber 10 and the first insulating plate 20 because the first insulating plate 20 is apart from the outer wall of the chamber 10, and there may be a second space a2 between the first insulating plate 20 and the second insulating plate 30 because the second insulating plate 30 is apart from the first insulating plate 20. The first space a1 and the second space a2 serve as an insulating barrier for shielding heat of the chamber 1 against an outer space.

It is possible to shield the heat of the chamber 10 more effectively by the two insulating plates, that is, the first and second insulating plates 20 and 30, and the two gas insulating layers (i.e., the first space a1 and the second space a2) between the wall of the chamber 10 and the external space.

Unlike the prior art in which the first insulating plate 2 is attached to the wall of the chamber, the present invention may prevent the heat of the chamber 10 from being directly transmitted to the first insulating plate 20 by keeping the first insulating plate 20 at a certain distance from the wall of the chamber 10. In addition, the two gas insulating layers may be formed to minimize thermal conductivity from the chamber 10 and to achieve effective heat shielding.

In an example, the first preset distance d1 may be greater than the second preset distance d2. As a result, for example, when refrigerant is introduced into the second space a2 as shown in FIG. 4A, loss of a heating temperature of the wall of the chamber 10 may be minimized.

Although FIG. 3 shows only two insulating plates, the disclosure is not limited thereto, and three or more insulating plates may be arranged to shield heat of the chamber 10.

FIG. 4A is a cross-sectional view of a heat shielding device according to further embodiments.

The substrate processing device may further include a refrigerant supplier 70 for supplying refrigerant to the first space a1 and/or the second space a2 in order to maximize heat shielding efficiency. It may be preferable that the refrigerant supplier 70 supplies refrigerant to the second space a2 rather than the first space a1. The second space a2 may have a lower temperature than the first space a1 when refrigerant is supplied only to the second space a2 so that the heating temperature loss of the chamber 10 may be minimized and at the same time heat transmit to the outside may be blocked. The first preset distance d1 may be greater than the second preset distance d2 to reduce the loss of the heating temperature of the chamber 10 while increasing cooling efficiency of the second space a2.

In more detail, as shown in FIG. 4A, the substrate processing device may further include a refrigerant supplier 70 for supplying refrigerant to the second space a2. By supplying refrigerant to the second space a2 through the refrigerant supplier 70, heat shielding efficiency may be increased. In addition, to increase the heat shielding efficiency, the refrigerant supplier 70 may provide lower temperature refrigerant and/or increase the flow rate of refrigerant and/or provide pressurized refrigerant.

Although FIG. 4A shows that refrigerant is supplied only to the second space a2, the refrigerant may be supplied to at least one of the first space a1 and the second space a2, as described later below.

FIG. 4B shows an example of the refrigerant supplier 70. As shown in FIG. 4B, the refrigerant supplier 70 may be in the form of a tube and may include a plurality of holes H for supplying refrigerant. By adjusting the size, the number, and the like of the holes H of the refrigerant supplier, the refrigerant supplier may provide refrigerant with a suitable flow rate and/or pressure. The refrigerant may be fluid, in particular gas. Although FIG. 4B shows a tube-type refrigerant supplier, the disclosure is not limited thereto. For example, the refrigerant supplier may be a fan or a corresponding device.

Referring again to FIG. 4A, the substrate processing device may further include a suction unit 80 a for sucking gas inside the second space a2. The suction unit 80 a may be installed to be in fluid communication with the second space a2 and may suck refrigerant (e.g., gas) supplied to the second space a2 through the refrigerant supplier 70 and discharge the refrigerant to the outside. The suction unit 80 a may be, for example, a pipe.

FIG. 5 schematically shows a cross-sectional view of a heat shielding device of a substrate processing device according to further embodiments. The heat shielding device of the substrate processing device according to the embodiments may be a modification of the heat shielding device according to the above-described embodiments. Hereinafter, repeated descriptions of the embodiments will not be given herein.

Referring to FIG. 5, the substrate processing device may further include an additional refrigerant supplier 60 for supplying refrigerant to the first space a1. By additionally supplying refrigerant to the first space a1 through the refrigerant supplier 60, heat shielding efficiency may be increased.

It is preferable that the temperature of the second space a2 is lower than the temperature of the first space a1 so as to minimize loss of a heating temperature of the chamber 10 while shielding the heat from the chamber 10. To this end, the refrigerant supplier 70 and the additional refrigerant supplier 60 may control at least one of a temperature and a flow rate of the refrigerant such that the temperature of the second space a2 is lower than the temperature of the first space a1.

The substrate processing device may further include a suction unit 80 b for sucking gas in the first space a1 and the second space a2. The suction unit 80 b may be installed to be in fluid communication with the first space a1 and the second space a2 and may suck refrigerant supplied to the first space a1 through the additional refrigerant supplier 60 and refrigerant supplied to the second space a2 through the refrigerant supplier 70 and discharge the refrigerants to the outside.

FIG. 6 schematically shows a cross-sectional view of a heat shielding device of a substrate processing device according to further embodiments. The heat shielding device of the substrate processing device according to the embodiments may be a modification of the heat shielding device according to the above-described embodiments. Hereinafter, repeated descriptions of the embodiments will not be given herein.

As shown in FIG. 6, there may be at least one gap G in the first insulating plate 20. The first space a1 and the second space a2 may communicate with each other through the at least one gap G. Since the first space a1 and the second space a2 communicate with each other, the suction unit 80 a may be connected only to the first space a1.

FIG. 7 shows a modification of the heat shielding device of FIG. 6. The heat shielding device of FIG. 7, unlike FIG. 6, does not include an additional refrigerant supplier 60. However, since the first space a1 and the second space a2 communicate with each other through the at least one gap G, refrigerant introduced into the second space a2 through the refrigerant supplier 70 will be introduced into the first space a1 through the at least one gap G so that the first space a1 may be cooled and exhausted through the suction unit 80 a connected to the first space a1. In order to cool the first space a1 more evenly, as shown in FIG. 8, it is preferable that the at least one gap G is under the first insulating plate 20.

As such, the heat shielding device of FIG. 7 may cool both the first space a1 and the second space a2 with only the refrigerant supplier 70 without installing the additional refrigerant supplier 60. Since refrigerant supplied by the refrigerant supplier 70 flows into the first space a1 through the second space a2, a temperature of the first space a1 may be maintained higher than a temperature of the second space a2. As a result, heat may be effectively blocked at the same time while minimizing loss of a heating temperature of the chamber 10.

As described above with reference to FIGS. 3 to 8, according to other embodiments, the number and arrangement of insulating plates, refrigerant suppliers, suction units, gaps, and the like may be diversified considering cooling efficiency, temperature distribution, and the like, thereby improving the cooling efficiency. In this regard, a more detailed description will be made with reference to FIGS. 10A to 10F and FIGS. 11A to 110.

FIG. 9 schematically shows a cross-sectional view of a substrate processing device including a heat shielding device according to embodiments, the substrate processing device being installed in a substrate processing factory, e.g. FAB.

Referring to FIG. 9, the substrate processing device may include the chamber 10, a gas supplier 200, a heat shielding device 90, a suction unit 110, and exhausters 120 and 130. The substrate processing device may be fixedly mounted on a floor 300 in the substrate processing factory FAB.

The gas supplier 200 may be installed on one surface of the chamber 10. For example, the gas supplier may be implemented as a gas supply pipe (or gas jungle box), or a shower head-type assembly structure. In particular, the gas supplier in FIG. 9 may be configured as an integrated gas supplier (IGS), which is a gas supplier in a block form.

The gas supplier 200 may supply gas (e.g., source gas, reactive gas, purge gas, etc.) to the chamber 10 through the gas supply pipe.

The heat shielding device 90 may include the first insulating plate 20, the second insulating plate 30, the refrigerant supplier 70, and the additional refrigerant supplier 60. The gap G may be formed on the first insulating plate 20.

A specific description of each portion of the heat shielding device 90 has been described in detail with reference to FIGS. 3 to 8, and therefore will not be given herein.

Although FIG. 9 shows a cross-sectional view of the substrate processing device including the heat shielding device of FIG. 6, the disclosure is not limited thereto. For example, the heat shielding device of FIG. 7 may be installed instead of the heat shielding device of FIG. 6.

The substrate processing device may further include the suction unit 110. The suction unit 110 may be configured to suck fluid (e.g., refrigerant gas) filled in the first space a1 of the heat shielding device 90. Although the suction unit 110 of FIG. 9 is shown as the suction unit 80 a of the above-described embodiments in FIG. 6, the disclosure is not limited thereto. For example, the suction unit 110 of FIG. 9 may be configured to suck fluid (e.g., refrigerant gas) filled in the first space a1 and the second space a2 like the suction unit 80 b of FIG. 5.

The suction unit 110 may suck refrigerant supplied through the refrigerant suppliers 60 and 70 and discharge the refrigerant through the exhausters 120 and 130 connected to the suction unit 110.

In a further embodiment, the suction unit 110 may be configured to be disposed along an outer wall of the gas supplier 200 as shown in FIG. 9, thereby making it possible to configure a substrate processing device that is easier to maintain. In another embodiment, the suction unit 110 may be directly connected to the gas supplier 200 so that the refrigerant passes through the inside of the gas supplier 200 and may be discharged to the exhausters 120 and 130. This makes it possible to configure a substrate processing device that is simpler and easier to maintain.

An exhauster may include a first exhaust pipe 120 and a second exhaust pipe 130. The first exhaust pipe 120 may be connected to the suction unit 110, and the second exhaust pipe 130 may be connected to the first exhaust pipe 120. The first exhaust pipe 120 and/or the second exhaust pipe 130 may be some of utility facilities in the substrate processing factory FAB.

In order to facilitate the efficient flow of refrigerant and to facilitate exhaust from the first space a1 and/or the second space a2, it is preferable that the relationship of pressure of the heat shielding device 90>pressure of the suction unit>pressure of the exhauster is satisfied (i.e., P_(heat shielding device)>P_(suction unit)>P_(first exhaust pipe)>P_(second exhaust pipe)). In particular, in the embodiment of FIG. 9, it is preferable that the relationship of pressure of the second space a2>pressure of the first space a1>pressure of the suction unit 110>pressure of the exhausters 120 and 130 is maintained so that gas in the second space a2 may be exhausted smoothly through the suction unit 110 through the first space a1. By forming a pressure gradient in this way, gas flow of laminar flow may be maintained until refrigerant is introduced and exhausted. To maintain this pressure gradient, the substrate processing device may further include a pressure gauge (not shown) and/or a pressure controller (see FIG. 12). The pressure gauge may be installed in the first space a1, the second space a2, the suction unit 110, the exhausters 120 and 130, or the like and may measure the pressure of each of them. The pressure controller may monitor the pressures of the first space a1, the second space a2, the suction unit 110, and the exhausters 120 and 130 directly or through the pressure gauge in real time and may control pressures of some devices to maintain the above-described pressure relationship. For example, the pressure controller may adjust the pressure of the first space a1 and/or the second space a2 by adjusting a flow rate of the refrigerant supplier, and/or may adjust the pressure of the suction unit 110 by adjusting a suction pressure regulating valve (not shown) of the suction unit 110, and/or may adjust the pressure of the exhausters 120 and 130 by adjusting a pressure regulating valve (not shown) of the exhausters 120 and 130. FIG. 12 shows a pressure controller for monitoring and/or controlling the pressure of a refrigerant supplier, the pressure of a heat shielding unit (i.e., the pressure of the first space a1 and the second space a2), the pressure of a suction unit, and the pressure of an exhauster.

In a further embodiment, the exhausters 120 and 130 may be connected to the gas supplier 200. The exhausters 120 and 130 may keep the gas supplier 200 at a certain temperature by exhausting the inside of the gas supplier 200, thereby reducing the risk of fire, toxic gas leakage, and the like.

In order to facilitate the exhaust of the gas supplier 200, it is preferable that the relationship of pressure of the gas supplier 200>pressure of the suction unit 110>pressure of the exhausters 120 and 130 is maintained (that is, P_(gas supplier)>P_(suction unit)>P_(first exhaust pipe)>P_(second exhaust pipe)).

To maintain this pressure gradient, the substrate processing device may further include a pressure gauge (not shown) and/or a pressure controller (not shown). The pressure gauge may be installed in the gas supplier 200, the suction unit 110, the exhausters 120 and 130, or the like and may measure the pressure of each of them. The pressure controller may monitor the pressures of the gas supplier 200, the suction unit 110, the exhausters 120 and 130 directly or through the pressure gauge or in real time and may control pressures of some devices to maintain the above-described pressure relationship. For example, the pressure controller may adjust the pressure of the gas supplier 200, and/or may adjust the pressure of the suction unit 110 by adjusting a suction pressure regulating valve of the suction unit 110, and/or may adjust the pressure of the exhausters 120 and 130 by adjusting a pressure regulating valve of the exhausters 120 and 130. FIG. 12 shows a pressure controller for monitoring and/or controlling the pressure of a gas supplier, the pressure of a heat shielding unit (i.e., the pressure of the first space a1 and the second space a2), the pressure of a suction unit, and the pressure of an exhauster.

FIG. 10A schematically shows a top view of a heat shielding device according to embodiments. The heat shielding device of the substrate processing device according to the embodiments may be a modification of the heat shielding device according to the above-described embodiments. Hereinafter, repeated descriptions of the embodiments will not be given herein.

The substrate processing device may include the chamber 10, a first insulating plate 20 a apart from the chamber 10 and surrounding the chamber 10, and a second insulating plate 30 a apart from the first insulating plate 20 a and surrounding the first insulating plate 20 a.

The first insulating plate 20 a may be apart from the outer wall of the chamber 10 by at least one first support 40. The second insulating plate 30 a may be apart from the first insulating plate 20 a by at least one second support 50.

The first insulating plate 20 a and the chamber 10 are apart from each other so that the first space a1 may be between the first insulating plate 20 a and the chamber 10. The first insulating plate 20 a and the second insulating plate 30 a are apart from each other so that the second space a2 may be between the first insulating plate 20 a and the second insulating plate 30 a. In a case of the heat shielding device of FIG. 10A, the first space a1 and the second space a2 continuously surround the chamber 10. However, the disclosure is not limited thereto. For example, as shown in FIGS. 11A to 11C, insulating plates may be separately provided for each outer wall of the chamber 10 to shield heat from the chamber 10 to the outside.

As described above, by separating the first insulating plate from the wall of the chamber 10 instead of attaching the first insulating plate to the wall of the chamber 10, the heat of the chamber 10 may be prevented from being directly transmitted to the first insulating plate. In addition, two gas insulating layers(spaces) may be formed to minimize thermal conductivity from the chamber. Thus, effective heat shielding may be achieved.

Further, the substrate processing device further includes a refrigerant supplier that communicates with the first space a1 or the second space a2, so that the heat conductivity from the chamber may be further minimized. In particular, in the case of the heat shielding device of FIG. 10A, since the first space a1 and the second space a2 continuously surround the chamber, refrigerant may be introduced into the entire first space a1 and/or the entire second space a2 by only one refrigerant supplier and the gas in the entire first space a1 and/or the entire second space a2 may be sucked by only one suction port. This will be described later below with reference to FIGS. 10B to 10F.

FIGS. 10B to 10F schematically show various flow directions of refrigerant flowing in a heat shielding device according to other embodiments. According to FIGS. 10B to 10F, various refrigerant flows may be realized by changing the number and arrangement of insulating plates, refrigerant suppliers, suction units, gaps, and the like, thereby improving cooling efficiency. The heat shielding device according to these embodiments may be a variation of the heat shielding device of FIG. 10A. Hereinafter, repeated descriptions of the embodiments will not be given herein.

As a first example, the heat shielding device may include, as shown in FIG. 10B, the suction unit 80 a connected to the first space a1 and the refrigerant supplier 70 communicating with the second space a2. One gap G may be formed in the first insulating plate 20 a and the first space a1 and the second space a2 may communicate with each other through the gap G.

The gap G may be located opposite the refrigerant supplier 70 with respect to the chamber 10. Thus, refrigerant may flow symmetrically in the second space a2 and temperature distribution in the second space a2 may be symmetrical and/or uniform. This will be described later below.

The suction unit 80 a may suck gas in the first space a1. The suction unit 80 a may be located opposite the at least one gap G with respect to the chamber 10. Thus, refrigerant may flow symmetrically in the first space a1 and temperature distribution in the first space a1 may be symmetrical and/or uniform. This will be described later below.

In this example, refrigerant first flows into the second space a2 through the refrigerant supplier 70. The refrigerant flows simultaneously in the clockwise/counterclockwise direction in the second space a2 along the first insulating plate 20 a and a second insulating plate 30 a. The refrigerant flow flowing in the clockwise/counterclockwise direction in the second space a2 flows into the first space a1 through the gap G formed in the first insulating plate 20 a. The refrigerant flowing into the first space a1 flows respectively and simultaneously in the clockwise/counterclockwise direction in the first space a1 along an outer wall of the first insulating plate 20 a and the chamber 10. The refrigerant flowing in different directions in the first space a1 may be sucked by the suction unit 80 a.

According to this example, since the refrigerant flows symmetrically, simultaneously and uniformly in both the first space a1 and the second space a2, uneven cooling may be prevented. Further, since the refrigerant flows into the first space a1 through the second space a2, a temperature of the refrigerant flowing into the first space a1 will be higher than a temperature of the refrigerant flowing into the second space a2. Thus, it is possible to reduce the loss of a heating temperature of a chamber wall while shielding heat from the chamber wall to the outside. However, a difference between the temperatures of the refrigerants flowing into the first space a1 and the second space a2 may be diversified by increasing a flow rate of the refrigerant flowing into the second space a2, and/or increasing the number of gaps formed in the first insulating plate 20 a, and/or increasing the number of refrigerant inlets.

Furthermore, in this example, the entire periphery of the chamber 10 is uniformly cooled by using only one refrigerant supplier 70, one suction unit 80 a, and one gap G. This is possible because the first space a1 and the second space a2 continuously surround the chamber and the first space a1 and the second space a2 communicate with each other through the gap G. That is, the first insulating plate 20 a continuously surrounds the chamber 10 and the second insulating plate 30 a continuously surrounds the first insulating plate 20 a, so that the number of parts necessary for cooling the periphery of the chamber may be reduced, thereby reducing the cost of manufacturing and installing the heat shielding device.

As a second example, the heat shielding device may include, as shown in FIG. 100, the suction unit 80 a connected to the first space a1 and the refrigerant supplier 70 communicating with the second space a2. Two gaps G may be formed in the first insulating plate 20 a and the first space a1 and the second space a2 may communicate with each other through the gap G.

Unlike FIG. 10B where only one gap G is formed, two gaps G are formed in the first insulating plate 20 a of FIG. 100. However, in a case of the heat shielding device shown in FIG. 100, refrigerant does not flow into the first space a1 through the second space a2 but flows into the first space a1 and the second space a2 through the refrigerant supplier 70 at the same time. Therefore, a temperature of the refrigerant flowing into the first space a1 and a temperature of the refrigerant flowing into the second space a2 may be substantially equal to each other. Thus, in order to minimize the loss of the heating temperature of the chamber wall while shielding heat from the chamber wall to the outside, the heat shielding device of FIG. 10B is more advantageous than the heat shielding device of FIG. 100.

As a third example, the heat shielding device may include, as shown in FIGS. 10D and 10E, two or more gas suppliers 60 and 70 symmetrically arranged in at least one of the first space a1 and the second space a2, and two or more suction units 80 a and 80 b symmetrically arranged in at least one of the first space a1 and the second space a2. FIG. 10D shows an example in which the gap G is formed in the first insulating plate 20 a and FIG. 10E shows an example in which the gap G is not formed in the first insulating plate 20 a.

Since the gas suppliers 60 and 70 and the suction units 80 a and 80 b are symmetrically arranged, the flow of refrigerant in the first space a1 and the second space a2 is symmetrical, so that the periphery of the chamber 10 may be cooled symmetrically and uniformly.

Finally, FIG. 10F shows a case where refrigerant flows symmetrically in the first space a1 and the second space a2 although the gas suppliers 60 and 70 and the suction units 80 a and 80 b are not symmetrically arranged.

FIG. 11A schematically shows a top view of a heat shielding device according to other embodiments. The heat shielding device of the substrate processing device according to the embodiments may be a modification of the heat shielding device according to the above-described embodiments. Hereinafter, repeated descriptions of the embodiments will not be given herein.

The substrate processing device may include the chamber 10, a plurality of first insulating plates 20 b, and a plurality of second insulating plates 30 b.

Each of the plurality of first insulating plates 20 b may form the first space a1 together with one outer wall of the chamber 10. A plurality of first spaces a1 may be formed by the plurality of first insulating plates 20 b and the outer wall of the chamber 10. The plurality of first spaces a1 may be apart from each other.

Each of the plurality of second insulating plates 30 b may form the second space a2 together with one of the plurality of first insulating plates 20 b. A plurality of second spaces a2 may be formed by the plurality of first insulating plates 20 b and the plurality of second insulating plates 30 b. The plurality of second spaces a2 may be apart from each other. Unlike the heat shielding device of FIG. 10A, in the heat shielding device of FIG. 11A, the first space a1 and the second space a2 are not continuously formed along the outer wall of the chamber 10.

The two gas insulating layers a1 and a2 are formed between the outer wall and the outer space of the chamber using the first insulating plates 20 b and the second insulating plates 30 b so that heat radiated to the outside from the chamber wall heated to a high temperature may be blocked. This may reduce heat loss and power consumed when heating the chamber to a certain temperature, and may reduce safety problems such as burning of an operator.

Further, the substrate processing device further includes a refrigerant supplier that communicates with the first space a1 or the second space a2, so that the heat conductivity from the chamber may be further minimized. In particular, the substrate processing device may further include a refrigerant supplier communicating with the second space a2 so as to minimize the loss of a heating temperature of the chamber 10 while at the same time shielding heat to the outside. However, unlike the heat shielding device of FIG. 10A, in the case of FIG. 11A, since the plurality of second spaces a2 are apart from each other, at least one refrigerant supplier needs to be connected to each of the second spaces a2 in order to supply refrigerant to all the second spaces a2. This will be described later below with reference to FIGS. 11B and 110.

FIGS. 11B and 11C schematically show various flow directions of refrigerant flowing in a heat shielding device according to other embodiments. Referring FIGS. 11B and 110, various refrigerant flows may be realized by changing the number and arrangement of insulating plates, refrigerant suppliers, suction units, gaps, and the like, thereby improving cooling efficiency. The heat shielding device according to these embodiments may be a variation of the heat shielding device of FIG. 11A. Hereinafter, repeated descriptions of the embodiments will not be given herein.

The heat shielding device may include a plurality of suction units 80 a connected to the respective first spaces a1 and a plurality of refrigerant suppliers 70 communicating with the respective second spaces a2 as shown in FIGS. 11B and 110. At least one gap G may be formed in each of the first insulating plates 20 b. Each of the first spaces a1 may communicate with the corresponding second space a2 through the gap G.

As shown in FIGS. 11B and 11C, the plurality of suction units 80 a, the plurality of refrigerant suppliers 70, and a plurality of gaps G may be symmetrically arranged with respect to the chamber 10 so that temperature distribution around the outside of the chamber 10 may be symmetrical and/or uniform.

Unlike the heat shielding device of FIG. 10B, which is capable of cooling the entire second space a2 using only one refrigerant supplier, the heat shielding device of FIGS. 11B and 110 requires at least four refrigerant suppliers to cool the entire second space a2. This is because the plurality of second spaces a2 are apart from each other in the case of the heat shielding device of FIGS. 11B and 110. Thus, although the configurations of FIGS. 11B and 110 may require more devices (e.g., a refrigerant supplier, a suction unit, etc.) than the configuration of FIG. 10B, there is an advantage that a temperature of each of the second spaces a2 and a refrigerant flow rate may be individually and more precisely controlled.

A heat shielding device according to embodiments may block heat from a chamber wall heated to a high temperature during a substrate processing process, thereby reducing heat loss and power consumed when a chamber is heated to a certain temperature. Further, the heat shielding device may reduce safety problems such as burning of an operator. In a further embodiment, cooling efficiency may be improved by varying temperatures and flow rates of a refrigerant supplier, a suction unit, and refrigerant of the heat shielding device according to the embodiments. In another further embodiment, the heat shielding device may facilitate the efficient flow of refrigerant by sequentially changing refrigerant flow pressures at the refrigerant supplier, the suction unit, and an exhauster, that is, by forming a pressure gradient.

The above disclosure provides a number of embodiments and a number of exemplary advantages of a substrate processing device including the heat shielding device. For the sake of brevity, only a limited number of combinations of related features have been described. It should be understood, however, that features of any example may be combined with features of any other example. Moreover, it should be understood that these advantages are non-limiting and that no particular advantage is specified or required in any particular example embodiment.

It should be understood that embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each embodiment should typically be considered as available for other similar features or aspects in other embodiments. While one or more embodiments have been described with reference to the figures, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure as defined by the following claims. 

What is claimed is:
 1. A substrate processing device comprising: a chamber; a first insulating plate apart from an outer wall of the chamber by a first preset distance; and a second insulating plate apart from the first insulating plate by a second preset distance, wherein the first insulating plate is between the outer wall of the chamber and the second insulating plate.
 2. The substrate processing device of claim 1, wherein the first preset distance is equal to or greater than the second preset distance.
 3. The substrate processing device of claim 1, wherein a first space is between the outer wall of the chamber and the first insulating plate, a second space is between the first insulating plate and the second insulating plate, wherein the substrate processing device further comprises a refrigerant supplier configured to supply refrigerant to the second space.
 4. The substrate processing device of claim 3, further comprising: an additional refrigerant supplier supplying refrigerant to the first space.
 5. The substrate processing device of claim 4, further comprising: a suction unit configured to suck gas in the first space and the second space.
 6. The substrate processing device of claim 4, wherein the refrigerant supplier and the additional refrigerant supplier control at least one of the temperature and the flow rate of refrigerant such that a temperature of the second space is lower than a temperature of the first space.
 7. The substrate processing device of claim 3, wherein at least one gap is in the first insulating plate, and the first space and the second space communicate with each other through the at least one gap.
 8. The substrate processing device of claim 7, wherein the at least one gap is located below the first insulating plate.
 9. The substrate processing device of claim 7, further comprising a suction unit sucking gas in the first space.
 10. The substrate processing device of claim 9, further comprising: a gas supplier configured to supply gas into the chamber; and an exhauster connected to the gas supplier and the suction unit.
 11. The substrate processing device of claim 10, wherein the relationship of pressure of the second space>pressure of the first space>pressure of the suction unit>the pressure of the exhauster is satisfied, and the relationship of pressure of the gas supplier>pressure of the suction unit>pressure of the exhauster is satisfied.
 12. A substrate processing device comprising: a chamber; a first insulating plate surrounding the chamber and apart from the chamber; and a second insulating plate surrounding the first insulating plate and apart from the first insulating plate.
 13. The substrate processing device of claim 12, wherein a first space is between the chamber and the first insulating plate, and a second space is between the first insulating plate and the second insulating plate, and the substrate processing device further comprises at least one refrigerant supplier communicating with the first space or the second space.
 14. The substrate processing device of claim 13, wherein the at least one refrigerant supplier communicates with the second space, at least one gap is in the first insulating plate, and the first space and the second space communicate with each other through the at least one gap.
 15. The substrate processing device of claim 14, wherein the at least one gap is located opposite the at least one refrigerant supplier with respect to the chamber.
 16. The substrate processing device of claim 15, further comprising: a suction unit configured to suck gas in the first space, wherein the suction unit is located opposite the at least one gap with respect to the chamber.
 17. The substrate processing device of claim 16, wherein a temperature of the refrigerant flowing into the first space is higher than a temperature of the refrigerant flowing into the second space.
 18. The substrate processing device of claim 13, wherein at least one gap is in the first insulating plate, and the first space and the second space communicate with each other through the at least one gap, the substrate processing device comprises: two or more gas suppliers symmetrically arranged in at least one of the first space and the second space; and two or more suction units symmetrically arranged in at least one of the first space and the second space.
 19. A substrate processing device comprising: a chamber; a plurality of first insulating plates respectively forming a plurality of first spaces together with one outer wall of the chamber; and a plurality of second insulating plates respectively forming a plurality of second spaces together with one of the plurality of first insulating plates, wherein each of the plurality of first insulating plates is between one outer wall of the chamber and one of the plurality of second insulating plates, the plurality of first spaces are apart from each other, and the plurality of second spaces are apart from each other.
 20. The substrate processing device of claim 19, wherein each of the plurality of second spaces communicates with at least one refrigerant supplier. 